Fred L. Terry, Jr. received the B.S. and M.S. degrees in 1981 and the Ph.D. in 1985, all in electrical engineering from the Massachusetts Institute of Technology, Cambridge. His doctoral work involved the electronic properties of ammonia-annealed silicon dioxide films (nitrided oxides). After completing his education, he joined the Department of Electrical Engineering and Computer Science at the University of Michigan, Ann Arbor, where he is currently a professor. His research activities include applications of mid-infrared, supercontinuum-based instrumentation and measurements; nondestructive, in situ thin-film characterization techniques, including spectroscopic ellipsometry and reflectometry; control of semiconductor processes and equipment; sensing systems for process control; and plasma etch and deposition processes. He and his students have previously conducted research on low-temperature deposition of high-quality insulators for MIS devices on Si, InP, and GaAs, InP HFET device fabrication and physics, deep submicron etch processes, and processes for high-temperature Si MOS operation and for operation in ionizing radiation environments. Prof. Terry and his colleagues in control systems performed the first published demonstrations of real-time multiple-input/multiple-output (MIMO) feedback control of a reactive-ion etcher (RIE). In subsequent work, the group he led developed optical methods for measuring the in situ, real-time evolution of deep submicron features. This technique, often called spectroscopic scatterometry, rapidly became an industrially applied in-line critical dimension measurement tool, and its accuracy has been shown to be superior to top-down scanning electron microscopy. Prof. Terry and his students published the first archival results in this area. His group has the only experimentally measured movies of feature evolution in an RIE. They also used this technique to perform the first demonstrations of etching to a target critical dimension under automatic control. Prof. Terry and his students have also developed plasma density measurement techniques and used them to stabilize variations in an industrial RIE. This led to a 3-fold reduction in the variance of this system. Prof. Terry has consulted extensively with industry frequently on advanced metrology for process control and has served as an invited speaker on process control issues. Dr. Terry is a senior member of the IEEE and is a member of the American Physical Society and Sigma Xi. He was a founding Associate Editor for the IEEE Transactions on Nanotechnology.
